Improve compatibility with FRAM mods

This commit is contained in:
sanni 2021-12-29 11:55:27 +01:00
parent 2a61c59599
commit 47812606aa

View File

@ -316,10 +316,10 @@ void setup_GB() {
//A8-A15
DDRK = 0xFF;
// Set Control Pins to Output RST(PH0) CS(PH3) WR(PH5) RD(PH6)
DDRH |= (1 << 0) | (1 << 3) | (1 << 5) | (1 << 6);
// Set Control Pins to Output RST(PH0) CLK(PH1) CS(PH3) WR(PH5) RD(PH6)
DDRH |= (1 << 0) | (1 << 1) | (1 << 3) | (1 << 5) | (1 << 6);
// Output a high signal on all pins, pins are active low therefore everything is disabled now
PORTH |= (1 << 0) | (1 << 3) | (1 << 5) | (1 << 6);
PORTH |= (1 << 0) | (1 << 1) | (1 << 3) | (1 << 5) | (1 << 6);
// Set Data Pins (D0-D7) to Input
DDRC = 0x00;
@ -479,8 +479,8 @@ byte readByteSRAM_GB(word myAddress) {
__asm__("nop\n\t""nop\n\t""nop\n\t""nop\n\t");
// Pull CS(PH3) LOW
PORTH &= ~(1 << 3);
// Pull CS(PH3) CLK(PH1)(for FRAM MOD) LOW
PORTH &= ~((1 << 3) | (1 << 1));
// Pull RD(PH6) LOW
PORTH &= ~(1 << 6);
@ -489,8 +489,8 @@ byte readByteSRAM_GB(word myAddress) {
// Read
byte tempByte = PINC;
// Pull CS(PH3) HIGH
PORTH |= (1 << 3);
// Pull CS(PH3) CLK(PH1)(for FRAM MOD) HIGH
PORTH |= (1 << 3) | (1 << 1);
// Pull RD(PH6) HIGH
PORTH |= (1 << 6);
@ -506,8 +506,8 @@ void writeByteSRAM_GB(int myAddress, uint8_t myData) {
__asm__("nop\n\t""nop\n\t""nop\n\t""nop\n\t");
// Pull CS(PH3) LOW
PORTH &= ~(1 << 3);
// Pull CS(PH3) CLK(PH1)(for FRAM MOD) LOW
PORTH &= ~((1 << 3) | (1 << 1));
// Pull WR(PH5) low
PORTH &= ~(1 << 5);
@ -516,8 +516,8 @@ void writeByteSRAM_GB(int myAddress, uint8_t myData) {
// Pull WR(PH5) HIGH
PORTH |= (1 << 5);
// Pull CS(PH3) HIGH
PORTH |= (1 << 3);
// Pull CS(PH3) CLK(PH1)(for FRAM MOD) HIGH
PORTH |= (1 << 3) | (1 << 1);
// Leave WE high for at least 50ns
__asm__("nop\n\t""nop\n\t""nop\n\t""nop\n\t");