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busyCheck29F032 changes to match the datasheet
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@ -962,7 +962,8 @@ void writeFlash29F032() {
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}
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}
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void busyCheck29F032(byte c) {
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int busyCheck29F032(uint32_t addr, byte c) {
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int ret = 0;
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// Set data pins to input
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dataIn8();
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@ -972,13 +973,32 @@ void busyCheck29F032(byte c) {
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PORTH |= (1 << 4) | (1 << 5);
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//When the Embedded Program algorithm is complete, the device outputs the datum programmed to D7
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while ((PINC & 0x80) != (c & 0x80)) {}
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for (;;) {
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uint8_t d = readByte_Flash(addr);
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if ((d & 0x80) == (c & 0x80)) {
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break;
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}
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if ((d & 0x20) == 0x20) {
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// From the datasheet:
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// DQ 5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count).
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// Under these conditions DQ 5 will produce a “1”.
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// This is a failure condition which indicates that the program or erase cycle was not successfully completed.
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// Note : DQ 7 is rechecked even if DQ 5 = “1” because DQ 7 may change simultaneously with DQ 5 .
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if ((d & 0x80) == (c & 0x80)) {
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break;
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} else {
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ret = 1;
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break;
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}
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}
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}
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// Set data pins to output
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dataOut();
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// Setting OE(PH1) OE_SNS(PH3) HIGH
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PORTH |= (1 << 1) | (1 << 3);
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return ret;
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}
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/******************************************
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29F1610 flashrom functions
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@ -1345,7 +1365,7 @@ void writeFlash29F800() {
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writeByte_Flash(0x5555 << 1, 0xa0);
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// Write current byte
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writeByte_Flash(currByte + c, sdBuffer[c]);
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busyCheck29F032(sdBuffer[c]);
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busyCheck29F032(currByte + c, sdBuffer[c]);
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}
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}
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